Semiconductor packages and methods for forming semiconductor package

ABSTRACT

Semiconductor packages and methods for forming a semiconductor package are presented. The semiconductor package includes a package substrate having a die region on a first surface thereof. The package includes a die having a sensing element. The die is disposed in the die region and is electrically coupled to contact pads disposed on the first surface of the package substrate by insulated wire bonds. A cap is disposed over the first surface of the package substrate. The cap and the first surface of the package substrate define an inner cavity which accommodates the die and the insulated wire bonds. The insulated wire bonds are directly exposed to an environment through at least one access port of the package.

BACKGROUND

Sensing elements used for detecting different environmental parameters,such as velocity, speed, gravitational force, pressure, electromagneticradiation, are widely used in various devices. As technology advances,sensing devices with higher speed and sensitivity are of high demand.However, the current processes used for producing these sensing devicesare relatively complex, require more material and thus lead to highermanufacturing cost.

From the foregoing discussion, there is a desire to provide an improvedand simplified package for sensing devices. It is also desirable toprovide simplified methods to produce a reliable package for sensingdevices at relatively low cost.

SUMMARY

Embodiments generally relate to semiconductor packages and methods forforming a semiconductor package. In one embodiment, a semiconductorpackage is disclosed. The semiconductor package includes a packagesubstrate having a die region on a first surface thereof. The packageincludes a die having a sensing element. The die is disposed in the dieregion and is electrically coupled to contact pads disposed on the firstsurface of the package substrate by insulated wire bonds. A cap isdisposed over the first surface of the package substrate. The cap andthe first surface of the package substrate define an inner cavity whichaccommodates the die and the insulated wire bonds. The insulated wirebonds are directly exposed to an environment through at least one accessport of the package.

In another embodiment, a method for forming a semiconductor package ispresented. The method includes providing a package substrate having adie region on a first surface thereof. A die having a sensing element isprovided. The die is attached to the die region. The die is electricallycoupled to the contact pads disposed on the first surface of the packagesubstrate by insulated wire bonds. A cap is provided over the firstsurface of the package substrate. The cap and the first surface of thepackage substrate define a cavity which accommodates the die and theinsulated wire bonds. The insulated wire bonds are directly exposed toan environment through at least one access port of the package.

These and other objects, along with advantages and features of thepresent invention herein disclosed, will become apparent throughreference to the following description and the accompanying drawings.Furthermore, it is to be understood that the features of the variousembodiments described herein are not mutually exclusive and can exist invarious combinations and permutations.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. Also, the drawings are notnecessarily to scale, emphasis instead generally being placed uponillustrating the principles of the invention. In the followingdescription, various embodiments of the present invention are describedwith reference to the following drawings, in which:

FIGS. 1 a-1 e show simplified cross-sectional views of variousembodiments of a package;

FIG. 2 shows simplified cross-sectional view of another embodiment of apackage;

FIGS. 3 a-3 b show simplified cross-sectional views of various otherembodiments of a semiconductor package;

FIG. 4 shows simplified cross-sectional view of another embodiment of asemiconductor package; and

FIGS. 5 a-5 e, FIGS. 6 a-6 h and FIGS. 7 a-7 f show various embodimentsof a process for forming a semiconductor package.

DETAILED DESCRIPTION

Embodiments generally relate to semiconductor packages and methods forforming a semiconductor package. The packages are used to package one ormore semiconductor dies or chips. The die, for example, includes asensor or sensing element. The die, for example, may be amicro-electro-mechanical systems (MEMS) die suitable for use inmicrophone, gyroscope, accelerometer, optical sensor, etc. For the caseof more than one die, the dies may be arranged in a planar arrangement,vertical arrangement, or a combination thereof. The packages may beincorporated into electronic products or equipment, such as automotiveproducts, phones, computers as well as mobile and mobile smart products.Incorporating the packages into other types of products may also beuseful.

FIGS. 1 a-1 e show simplified cross-sectional views of variousembodiments of a package. The semiconductor packages 100 a-100 e, asshown in FIGS. 1 a-1 e, include a package substrate 101. The packagesubstrate includes first and second major surfaces 101 a-101 b. Thefirst major surface 101 a, for example, may be referred to as the topsurface and the second major surface 101 b, for example, may be referredto as the bottom surface. Other designations for the surfaces may alsobe useful.

The package substrate may be a single layer substrate or a multi-layersubstrate. For a multi-layer substrate, the different layers can belaminated or built-up. Various materials can be used to form the packagesubstrate. In one embodiment, the package substrate includes a printedcircuit board (PCB) substrate. The PCB substrate, for example, includesa glass-reinforced epoxy, such as a FR-4 based laminated substrate. Inanother example, the substrate may include a polymer substrate which isnot internally reinforced, such as but not limited to polyimidesubstrate. Other types of PCB materials are also useful. Alternatively,the package substrate includes ceramic or semiconductor based substrate.In another embodiment, the package substrate includes a metallicstructure which provides both a die attach or mounting region for a dieand electrical connections to the die and to external component. Othersuitable types of substrate materials may also be used as the packagesubstrate.

In one embodiment, the first major surface of the package substrateincludes first and second regions. The first region 105 a, for example,is a die or chip region on which a die 110 is mounted and the secondregion 105 b, for example, is a non-die region. In one embodiment, thenon-die region surrounds the die region. The die region, for example,may be disposed in a central portion of which the die is mounted and anon-die region which is outside of the die region. The die region, forexample, may be concentrically disposed within the periphery of thepackage substrate. Other configurations of die and non-die regions mayalso be useful.

Conductive traces (not shown) are formed on at least the first majorsurface of the package substrate. Generally, conductive traces areprovided on both the first and second major surfaces. The traces on thefirst major surface are coupled to the traces on the second majorsurface by vias (not shown), which are electrically coupled to packagecontacts 160 mounted on the second major surface of the packagesubstrate. In one embodiment, contact/bond pads 132 are provided on thenon-die region of the substrate. For example, each of the conductivetraces includes a contact/bond pad region and/or a line region. Thecontact pads are disposed on the contact/bond pad regions of theconductive traces on the first major surface for coupling with asemiconductor die or chip. Providing contact pads on the second or onboth major surfaces is also useful. The contact pads, in one embodiment,include a conductive layer, such as Cu, Al, Ag, Au, or any alloythereof. Alternatively, the contact pads may include a plurality ofconductive layers stacked one on another. Other suitable types ofconductive material may also be useful.

Package contacts 160 are disposed on the second major surface of thepackage substrate. The package contacts, for example, are sphericalshaped structures or balls. The package contacts protrude from thesecond major surface of the package substrate. Providing packagecontacts which do not protrude from the second major surface of thepackage substrate, such as solder lands, may also be useful. The packagecontact is formed of a conductive material. The package contacts, forexample, can be formed from solder. Various types of solder can be usedto form the package contacts. For example, the solder can be alead-based or non lead-based solder. Other suitable types of conductivematerials may also be used to form the package contacts.

A semiconductor die 110 is mounted on the substrate. The die includes amicro-electro-mechanical systems (MEMS) device, for instance, acantilever switch beam, resonator mass, capacitor electrode or anycombination thereof. The MEMS device may function as, for example, atransducer, a sensor, an actuator or combination thereof, depending onthe specific application. In one embodiment, the die includes a sensoror sensing element 115 which requires access to or in communication withan environment, including internal environment and external environmentoutside of the package. In a more specific example, the die, being asensor and having a sensing element, is a pressure sensor. Other typesof sensor may also be useful. The die, as shown, includes active andinactive major surfaces 110 a-110 b. In one embodiment, the sensingelement is disposed on the active major surface 110 a. Providing thesensing element at other parts of the die may also be useful.

In some embodiments, the sensing element may be sealed under a cap layer(not shown) on top of which a final passivation layer 117 is disposed.In such case, the passivation layer covers the active surface of thedie, such as that shown in FIG. 1 a, except at the locations where diepads are disposed. In some other embodiments, such as for use inmicrophone application, the sensing element and locations where die padsare disposed are not covered by the passivation layer.

The active surface 110 a, for example, includes die pads 113 to provideaccess to the internal circuitry of the die. As shown, the die pads arelocated on the active major surface and the periphery of the die. In oneembodiment, the active surface of the die includes low to medium numberof I/O connections or die pads for a die size of about, for example, 1mm×1 mm. For example, the number of I/O connections or die pads is about3-20. Other suitable numbers of die pads may also be useful. As shown,the active surface of the die may include openings in the finalpassivation layer to expose the die pads. Providing the die pads atother locations of the die can also be useful. In one embodiment, theinactive surface 110 b is mounted onto the die attach region of thesubstrate. In one embodiment, the die is attached to the die attachregion of the first major surface of the package substrate using anadhesive 120. The adhesive, in one embodiment, includes an insulatingadhesive. Various suitable types of adhesives, for example, epoxy,paste, film or tape, can be used.

The die, in one embodiment, is electrically connected to the packagesubstrate by wire bonds. The wire bonds, in one embodiment, includeinsulated wires 145. The insulated wires, for example, are attached todie pads of the die and to the contact pads on the first major surfaceof the package substrate. Simplified top and side cross-sectional viewsof the wire bonds are shown in A′ and B′ respectively in greater detail.The wire bonds, in one embodiment, include conductive wires 142 havingan outer coating 143 as shown in A′ and B′. The conductive wires, forexample, include Au, Cu, Ag or any alloy thereof while the outer coatingincludes an insulation material, such as dielectric material. Thedielectric material, for example, includes polymer. Any other suitabletypes of conductive and insulation materials may also be used for theconductive wires and the outer coating.

The outer coating, for example, includes sufficient thickness to protectthe conductive wires. The thickness of the outer coating, for example,may be about 0.2-30% of the thickness of the conductive wires. Forexample, the thickness of the outer coating is about 50-7500 nm. Othersuitable thickness ranges for the outer coating may also be useful. Inone embodiment, a first end 145 a of the wire bond is bonded to the diepad so as to form a ball bond 146 while a second end 145 b of the wirebond is bonded to the contact pad so as to form a stitch or wedge bond147 as shown in FIG. 1 a. In an alternative embodiment, a stud bump 144is formed on the die pad. A first end of the wire 145 a including a ball149 is connected to the contact pad and a second end of the wire 145 bis bonded on the stud bump to form a stitch bond 148 as shown in FIG. 1b. Other suitable wire bond configurations may also be useful. The outercoating of the wire bond, for example, covers or extends to about theentire length of the wire. For example, the outer coating may cover orextend to about the entire length of the wire except at the ball orportion of the wedge bond or ball bond. The outer coating 143, forexample, is conformal to the surface of the wire 142, including thebending portion of the wire. The outer coating, for example, should besufficiently resilient and elastic such that neither cracking norflaking would be found in the outer coating when the wire is processed.

In one embodiment, protective layers 150 may optionally be provided tocover or protect the stud bump, stitch or ball bond at the first orsecond end of the wire bond as illustrated in FIG. 1 c. Applying theprotective layer to other parts of the wire, the die or combinationthereof, may also be useful. The protective layers should be sufficientto cover and prevent oxidation on the stud bump and/or the stitch orball bond. The protective layer provides the mechanical reinforcement tothe bonding portion of the wire. The protective layer, for example,includes silica based gel, epoxy based adhesive or silicone basedcompound. The protective layer, for example, may be provided with orwithout any filler. For protective layer having filler, the filler size,for example, is smaller than the minimum pitch between two adjacent wirebonds. In one embodiment, the protective layer is a silicone compoundwithout filler. Other suitable types of materials may also be used forthe protective layer.

As described in FIGS. 1 a-1 c, the semiconductor package includes asemiconductor die which includes a sensor or sensing element. Inaddition to the semiconductor die, one or more different types of diesor devices may also be mounted on the package substrate. For example,the second or more dies (not shown) can be a surface mount device whichmay include an application specific integrated circuit (ASIC) such as anamplifier, memory device such as a dynamic random access memory (DRAM),a static random access memory (SRAM) and various types of non-volatilememories including programmable read-only memories (PROM) and flashmemories, an optoelectronic device, a logic device, a communicationdevice, a digital signal processor (DSP), a microcontroller, asystem-on-chip, as well as other types of devices. Other suitable typesof devices may also be mounted on the package substrate.

In the case where the semiconductor package includes at least a diehaving a sensing element 110, such as a MEMS die, and a surface mountdevice 170, the wire bond 145 may include any suitable bond or loopconfiguration or profile which avoids high vertical wire loops whichcould potentially lead to thicker package. In one embodiment, the wirebond may include a bond profile having a lateral curvature as shown inFIG. 1 d. Such bond or loop profile may be referred to as J bond or Jloop and the top view of a portion of the package is shown as C′. Suchconfiguration is advantageous as it allows a thinner package to beformed and enables a more reliable and stable loop profile. Othersuitable types of bond or loop profile may also be used.

A cap 180 is disposed over the first major surface of the packagesubstrate as shown in FIGS. 1 a-1 d. The cap is attached to the firstmajor surface of the package substrate using an adhesive, solder paste,etc. (not shown). In one embodiment, a ground ring 190 may be providedon and exposed from the first major surface of the package substrate towhich the cap is electrically attached as shown in FIG. 1 a. The cap andthe package substrate, in one embodiment, define an inner cavity 182which accommodates the semiconductor die 110 and the wire bonds 145. Thecap includes a sufficient height to cover the semiconductor die and wirebonds. For example, the cap includes a height of about 0.5 to 1 mm.Other suitable height dimensions may also be useful, depending on designrequirement or specific application.

In one embodiment, the cap includes flat or even top portion 180 ahaving inner and outer surfaces 180 a ₁₋₂ and sidewalls 180 b which areabout perpendicular to the top portion of the cap. For example, thesidewalls are vertical with respect to the horizontal top portion of thecap. Alternatively, the sidewalls of the cap are sloped or slanted. Theangle θ of the sidewalls, being the acute or right angle between thesidewall and the horizontal plane of the first major surface of thesubstrate, for example, is about 70-90°. Other sidewall angles may alsobe useful. The top portion and sidewalls of the cap, in one embodiment,are made of a single material as shown in FIGS. 1 a-1 d. For example,the top portion and the sidewalls of the cap are made of stainlesssteel, copper, aluminum, etc. Other suitable types of material may alsobe useful for the cap. One or more plating layers may be formed thereon.In one embodiment, the plating material can be nickel or matt tin. Othersuitable types of plating material may also be useful.

In another embodiment, the top portion and the sidewalls of the cap aremade of different materials. For example, as shown in FIG. 1 e, the topportion 180 a of the cap includes a first material while the sidewalls180 b of the cap include a second material. The first material, forexample, includes transparent material, such as glass. Any othersuitable types of material which is transparent to the desired range oflight signal may be used for the top portion of the cap. The sidewallsof the cap, for example, include a dielectric material, such as moldcompound. Other suitable types of material may be used for forming thesidewalls of the cap.

Although the cap having two different materials is shown to be modifiedor applied for the embodiment shown in FIG. 1 a, it is understood thatsuch configuration of the cap may also be suitable for the embodimentsshown in FIGS. 1 b-1 d. As such, details for these packages may not bedescribed or described in detail.

In one embodiment, the cap includes an opening 184 which passes throughthe inner and outer surfaces of the top portion 180 a of the cap asshown in FIGS. 1 a-1 e. The opening, for example, serves as an accessport providing access path between the sensing element and the externalenvironment outside of the semiconductor package. The wire bonds, forexample, are also directly exposed to the ambient through the accessport of the cap as shown in FIGS. 1 a-1 e. For illustration purposes,one opening is shown. Providing more than one opening may also beuseful. The opening, for example, is disposed over the sensing element.Providing the opening at other location of the cap may also be useful.

FIG. 2 shows simplified cross-sectional view of another embodiment of apackage 200. The package is similar to the package as described in FIG.1 a. For example, the package includes a package substrate 101 and asemiconductor die 110 attached to the first major surface 101 a of thesubstrate. The semiconductor die is electrically connected to thepackage substrate using the insulated wires 145 as described in FIG. 1a. As such, common elements may not be described or described in detail.

In one embodiment, the sensing element 215 is disposed on the activesurface of the die. For example, the sensing element 215 and locationswhere die pads 113 are disposed are not covered by the final passivationlayer 217. In one embodiment, a sealing ring 227 is provided surroundingthe sensing element and a lid 229 is attached on top of the sealingring. The sealing ring, for example, includes a layer of SiO₂. Othersuitable types of sealing material may also be useful. The lid, as shownin FIG. 2, is attached to the sealing ring by deposition. The lid, inone embodiment, includes a semiconductor lid. The lid, for example, maybe made of materials such as SiN, SiC, Si and Ge. Other suitable typesof materials may also be used for the lid so long as it can protect thesensing element from noise signal and provide mechanical stiffness toform a cavity underneath it.

A cap 280 is disposed over the first major surface of the packagesubstrate as shown in FIG. 2. The cap is attached to the first majorsurface of the package substrate using an adhesive, solder paste, etc.(not shown). The cap, as shown, includes flat or even top portion 280 ahaving inner and outer surfaces 280 a ₁-280 a ₂ and sidewalls 280 bwhich are about perpendicular to the top portion of the cap. In oneembodiment, the cap includes one or more openings at the sidewalls 280 bof the cap while the top portion 280 a of the cap is devoid of anopening. For illustration purposes, two openings 284 a-284 b are shown.Providing more than two openings at the sidewalls and/or providing oneor more openings at the top portion of the cap may also be useful.Providing the openings at any other suitable locations of the cap mayalso be useful. The openings at the sidewalls, for example, pass throughthe inner and outer surfaces 280 b ₁-280 b ₂ of the sidewalls of the capas shown in FIG. 2. The openings, as shown, serve as access portsproviding access paths between the sensing element and the externalenvironment. The wire bonds 145, for example, are also directly exposedto the ambient through the access ports of the cap as shown in FIG. 2.

Although the cap having two openings and the lid and sealing ring asshown in FIG. 2 is applied for, for example, the embodiment shown inFIG. 1 a, it is understood that such configurations may also be suitablefor the embodiments shown in FIGS. 1 b-1 e. As such, details for thesepackages may not be described or described in detail.

FIG. 3 a-3 b show simplified cross-sectional views of other embodimentsof a package 300 a-300 b. The packages are similar to the package asdescribed in FIG. 1 a. For example, the packages include a packagesubstrate 301 and a semiconductor die 110 attached to the first majorsurface 301 a of the substrate. The semiconductor die is electricallyconnected to the package substrate using the insulated wires 145 asdescribed in FIG. 1 a. As such, common elements may not be described ordescribed in detail.

In one embodiment, the package substrate 301 as shown in FIG. 3 adiffers from the package substrate 101 of FIG. 1 a in that it includes ametallic structure. For example, the package substrate 301 may include aleadframe based or premolded leadframe substrate. Other suitable typesof metallic substrate may also be useful. The metallic substrate mayinclude, for example, copper. Other types of conductive materials mayalso be useful. In one embodiment, the metallic substrate includes apatterned metallic structure or leadframe. The patterned metallicstructure defines conductive line and traces which allow routing ofsignals under the die region 305 a, as well as areas outside of the dieregion such as the non-die region 305 b. For example, the patternedmetallic structure defines a line level 330 and a via or contact level340. The line level includes conductive traces 334. In one embodiment,the conductive traces are proximate to the first or top major surface301 a of the package substrate and coupled to the contact pads 132. Thevia or contact level includes via contacts 342 which are coupled to theconductive traces. The via contacts may be coupled to the packagecontacts 160 on the second or bottom major surface 301 b of the packagesubstrate. For example, the via contacts may extend from the line levelto the second major surface of the package substrate to couple to thepackage contacts (not shown). In one embodiment, the via contacts couplethe conductive traces to respective package contacts. Otherconfigurations of via contacts may also be useful.

In one embodiment, the package substrate includes a dielectric layer 350as shown in FIG. 3 a. The dielectric layer 350 may include first andsecond dielectric layers 350 a-350 b. For example, the first dielectriclayer 350 a isolates the conductive line and the second dielectric layer350 b isolates the via levels. Other configurations may also be useful.The dielectric layer, for example, includes polymer, such as moldcompound, or solder mask material. Other types of dielectric materials,such as dielectric composites, may also be useful. The dielectric layer,for example, includes openings exposing the via contacts. The bottomsurface of the dielectric layer, as shown, need not be coplanar with thesecond major surface of the package substrate. For example, thedielectric layer may be recessed below the via contacts, as shown inFIGS. 3 a-3 b. As shown, the via contacts may protrude above or extendbeyond the bottom surface of the dielectric layer.

As described, the package substrate includes a conductive line and vialevel and a dielectric layer isolating the conductive lines and vias. Inother embodiments, the package substrate may include two or more lineand via levels and dielectric layers (not shown). In this case, eitherone of the via levels or a portion of one of the line levels is exposedfrom the bottom of the package substrate for further interconnection toexternal component.

In another embodiment, stiffener 360 may optionally be provided at thenon-die region 305 b of the package substrate. As shown in FIG. 3 b,stiffener may be provided below the conductive traces located at thenon-die region of the package substrate. Alternatively, the stiffenermay be provided in the non-die region as well as partially extended tothe die region 305 a of the package substrate. The stiffener, forexample, should be sufficiently rigid to serve as a support andwithstand further processing steps. By way of non-limiting example, thestiffener includes a non-electrically conductive tape. Various types ofmaterials may be used for the stiffener.

Although the semiconductor package as shown in FIGS. 3 a-3 b are similarto the embodiment shown in FIG. 1 a, it is understood that such packagesubstrate as described in FIGS. 3 a-3 b may also be suitable for theembodiments shown in FIGS. 1 b-1 e and FIG. 2. As such, details forthese packages adopting the package substrate as described in FIGS. 3a-3 b may not be described or described in detail.

FIG. 4 shows simplified cross-sectional view of another embodiment of apackage 400. The package is similar to the package as described in FIG.1 a. For example, the package includes a package substrate 401 and asemiconductor die 410 attached to the first major surface 401 a of thesubstrate. The semiconductor die is electrically connected to thepackage substrate using the insulated wires 145 as described in FIG. 1a. As such, common elements may not be described or described in detail.

In one embodiment, the semiconductor package 400 includes asemiconductor die having a recess 414. In one embodiment, the recess isdisposed in an inactive region of the die. The recess, for example,extends from the inactive surface 410 b of the die. In one embodiment,the dimension of the recess is sufficient to accommodate a sensor orsensing element 415. For example, the width (W) of the recess is smallerthan the width of the die and the depth (D) of the recess is less thanthe height of the die. As shown in FIG. 4, the sensing element isattached to the bottom 414 b of the recess. The sensing element, forexample, is fabricated within the recess using known or other suitablesemiconductor fabrication technologies. Other configurations of mountingthe sensing element are also useful. Inner sidewalls 414 a of therecess, for example, include a slanted profile. Providing other sidewallprofiles, such as a vertical sidewall profile, is also useful.

The semiconductor die 410 is attached to the first major surface 401 aof the package substrate using, for example, an adhesive 420. In oneembodiment, the package substrate includes an opening 484 as shown inFIG. 4. The opening, in one embodiment, passes through the first andsecond major surfaces 401 a-401 b of the package substrate and theadhesive 420. The opening, for example, serves as an access portproviding access path between the sensing element and the environment.For illustration purposes, one opening is formed through the first andsecond major surfaces of the package substrate. Providing more than oneopening may also be useful. The opening, for example, is disposed belowthe sensing element. Providing the opening at other location of thepackage substrate may also be useful.

A cap 480 is disposed over the first major surface of the packagesubstrate. The cap is attached to the first major surface of the packagesubstrate using an adhesive, solder mask, etc. (not shown). The cap andthe package substrate, similar to that described in FIG. 1, define aninner cavity 482 which accommodates the semiconductor die 410 and thewire bonds 145. The cap includes flat or even top portion 480 a havinginner and outer surfaces 480 a ₁-480 a ₂ and sidewalls 480 b which areabout perpendicular to the top portion of the cap. Providing the caphaving slanted sidewalls is also useful. The cap, in one embodiment, isdevoid of an opening. The wire bonds 145, as shown in FIG. 4, are alsodirectly exposed to the ambient through the access port of the packagesubstrate.

The semiconductor package as described in FIG. 4 may optionally bemodified to include the wire bond configuration, the protective layersand/or the wire bond loop profile as described in, for example, FIGS. 1b-1 d respectively. The semiconductor package as described in FIG. 4 mayalso include the cap and lid and/or the package substrate as describedin, for example, FIGS. 2 and 3 a-3 b respectively. As such, details ofthe features as described with respect to these embodiments will not berepeated or described in detail.

As described in the embodiments of FIGS. 1 a-1 e, 2, 3 a-3 b and 4, thewire bonds include insulated wires. The outer coating of the insulatedwire protects the conductive wire from adverse effects such ascontamination, oxidation and/or corrosion caused by the environment. Theouter coating also prevents wire shorting. In addition, the use of theinsulated wires avoids the use of encapsulant or mold compound toencapsulate the semiconductor die and wire bonds and avoids the use ofhermetic sealing for the attachment of the cap.

Furthermore, a screen or other shield that is transparent to sound orlight which is generally provided to cover the access port to preventdebris or particles from entering the package is also not required. Thisallows the sensing element to be exposed and interact or communicatedirectly with the environment/ambient, including internal environmentand external environment outside of the package, leading to bettersensing performance. Such configuration thus enables a simplified andcost effective package to be produced.

In addition, in embodiments where the second end of the wire bond whichis bonded to the die pad includes a stitch bond on the stud bump, suchas that shown in FIG. 1 b, a low loop profile is formed. This enables athinner semiconductor package to be formed. The stitch bond strength isalso increased as the stitch bond is formed on the stud bump. Moreover,in embodiments where the wire bonds include a lateral loopconfiguration, such as that described in FIG. 1 c, it avoids loopingover the second device, leading to more stable and reliable electricalconnection to be formed.

FIGS. 5 a-5 e show an embodiment of a process for forming asemiconductor package 500. Referring to FIG. 5 a, a package substrate101 is provided. The package substrate may be a single layer substrateor a multi-layer substrate. For a multi-layer substrate, the differentlayers can be laminated or built-up. Various materials can be used toform the package substrate. In one embodiment, the package substrateincludes a printed circuit board (PCB) substrate. The PCB substrate, forexample, includes a glass-reinforced epoxy, such as a FR-4 basedlaminated substrate. In another example, the substrate may include apolymer substrate which is not internally reinforced, such as but notlimited to polyimide substrate. Other types of PCB materials are alsouseful. In another embodiment, the package substrate includes a metallicstructure which provides both a die attach or mounting region for a dieand electrical connections to the die and to external component.Alternatively, the package substrate includes ceramic or semiconductorbased substrate. Other suitable types of substrate materials may be usedas the package substrate.

The package substrate includes first and second major surfaces 101 a-101b. The first major surface 101 a, for example, may be referred to as thetop surface and the second major surface 101 b, for example, may bereferred to as the bottom surface. Other designations for the surfacesmay also be useful. The first major surface of the package substrateincludes first and second regions. The first region 105 a, for example,is a die or chip region and the second region 105 b, for example, is anon-die region.

The process continues by providing and attaching a semiconductor die 110to the die attach region defined on the top major surface of the packagesubstrate as shown in FIG. 5 b. The semiconductor die includes a sensoror sensing element 115, similar to that described in FIG. 1 a. As such,details of the die having the sensing element will not be described ordescribed in detail. In one embodiment, the die is mounted to the dieattach region using, for example, an adhesive 120. Other suitablemethods may also be used to mount the die to the package substrate.

Referring to FIG. 5 c, the process continues by electrically couplingthe die pads 113 to the contact pads 132 on the top surface of thesubstrate using wire bonds 145. The wire bonds, in one embodiment,include insulated wires such as that described in FIGS. 1 a-1 e, 2, 3a-3 b and 4. As such, details of the insulated wires will not bedescribed in detail. The insulated wire bonds may be formed and appliedto the die and contact pads using any suitable techniques. In oneembodiment, a first end 145 a of the wire bond is bonded to the die padso as to form a ball bond 146 while a second end 145 b of the wire bondis bonded to the contact pad so as to form a stitch or wedge bond 147.Other suitable types of wire bonding configuration may also be useful.

The process continues by providing and attaching a cap 180 over thepackage substrate. The cap, for example, is attached to the packagesubstrate using an adhesive, solder mask, etc. (not shown). Othersuitable techniques may also be employed to mount the cap to the packagesubstrate. The cap, for example, is similar to the one described inFIGS. 1 a-1 e. For example, the cap includes an opening 184 which passesthrough the inner and outer surfaces 180 a ₁-180 a ₂ of the top portion180 a of the cap as shown in FIG. 5 d. The opening, for example, servesas an access port providing access path between the sensing element andthe environment. The wire bonds 145, for example, are also directlyexposed to the ambient through the access port of the cap. Forillustration purposes, one opening is shown. Providing more than oneopening may also be useful. The opening, for example, is disposed overthe sensing element. Providing the opening at other location of the capmay also be useful.

The cap, in one embodiment, is formed of a metal foil. The cap havingthe top portion 180 a and sidewalls 180 b configuration as integral partthereof is formed from, for example, a metal foil by punching. The metalfoil may include one or more plating layers. For example, the cap can bemade of nickel plated copper or aluminum foil. The opening of the cap,in one embodiment, is formed by etching, drilling, punching, grinding orany combination thereof. Other suitable materials and techniques may beused to form the cap.

The process continues by forming package contacts 160. For example, thepackage contacts are formed on via contacts (not shown) on the secondsurface of the package substrate as shown in FIG. 5 e. The packagecontacts, for example, may include spherical shaped structures or ballsarranged in grid pattern to form a BGA type package. As such, asemiconductor package such as that shown in FIG. 1 a is formed. Thepackage contacts are formed of a conductive material. The packagecontacts, for example, can be formed from solder. Various types ofsolder can be used to form the package contacts. For example, the soldercan be a lead-based or non lead-based solder.

The process as described with respect to FIGS. 5 a-5 e may be modified.For example, the process may be modified in which a stud bump is formedon the die pad. A first end of the wire including a ball is connected tothe contact pad 132 and the second end of the wire is bonded on the studbump to form a stitch bond. As a result, a semiconductor package such asthat shown in FIG. 1 b is produced. Moreover, the process may optionallyinclude the step of providing and forming protective layers 150 coveringand protecting the stud bump and/or the stitch or ball bond at the firstor second end of the wire bond so that a semiconductor package such asthat illustrated in FIG. 1 c is formed. The protective layer, forexample, may be cured by UV light or heat. Alternatively, the processmay optionally be modified to provide a cap of which the top portion andsidewalls of the cap are made of different materials such as that shownin FIG. 1 e. For example, sidewalls of the cap which are made ofdielectric material such as mold compound may be provided over thepackage substrate prior to attaching the die on the package substrate.The top portion of the cap made of transparent material having anopening may be provided and attached to the sidewalls after forming theinsulated wire bonds.

FIGS. 6 a-6 h show another embodiment of a method for forming asemiconductor package 600. Referring to FIG. 6 a, a base or metalliccarrier 601 is provided. The base carrier, for example, may include aleadframe. Other suitable types of base carrier may also be used. Thebase carrier 601, in one embodiment, includes a conductive carrierhaving first and second major surfaces 601 a-b. The first and secondmajor surfaces, for example, include planar surfaces. Providing any oneof the major surfaces to be non-planar may also be useful. The firstmajor surface, for example, includes die attach region 305 a and non-dieregion 305 b. The conductive carrier, for example, includes Cu, Cualloy, Fe or Ni—Fe alloy. Other suitable types of conductive materialsmay also be useful. The thickness of the conductive carrier, forexample, is about 100-300 μm. Other suitable thicknesses may also beuseful. The conductive carrier, for example, may serve as part of theinterconnect structures, such as conductive trace or line and viacontacts, of the package substrate as will be described later.

In one embodiment, the process continues by processing the carrier. Inone embodiment, a first plated pattern (not shown) is formed on thefirst or top major surface of the carrier 601 a. In one embodiment, thefirst plated pattern defines the conductive traces of the line level330. The carrier is patterned, removing portions exposed by the firstplated pattern (not shown) as shown in FIG. 6 b. For example, a wet etchis used to remove exposed portions of the carrier. In one embodiment,the first major surface 601 a is processed such that it includes anon-planar surface having protruded portions and a plurality of recesses610. The protruded or unetched top portions of the carrier define theconductive traces 334 while the recesses 610 define locations of whichisolation regions separating adjacent conductive traces are to beformed.

Referring to FIG. 6 c, the process continues to form a first dielectricmaterial 350 a which fills the recesses between the conductive traces.In one embodiment, a dielectric layer is formed on the frontside or topsurface of the carrier, filling the spaces between the conductivetraces. The dielectric layer, for example, is formed of polymer, soldermask or dielectric composite materials. The dielectric layer, forexample, may be formed by dispensing, printing, lamination or spin ontechniques. Other dielectric materials and techniques may also beuseful.

The process continues by processing the carrier. A second plated pattern(not shown) is formed on the second or bottom major surface of thecarrier 601 b. In a more specific example, the first plated pattern isdifferent from the second plated pattern. In one embodiment, the secondplated pattern defines the via contacts of the via level 340. Forexample, the second plated pattern corresponds to via contacts. Thecarrier is patterned, removing portions of the bottom surface of thecarrier which are exposed by the second plated pattern as shown in FIG.6 d. For example, a wet etch is used to remove exposed portions of thecarrier. This leaves remaining portion of the carrier which forms thevia contacts 342 of the via level as shown in FIG. 6 d.

Referring to FIG. 6 e, the process continues to form a second dielectricmaterial 350 b which fills the gaps between the via contacts. In oneembodiment, a dielectric layer is formed on the backside of the carrier,filling the spaces between the via contacts. The dielectric layer 350 b,for example, is formed of polymer, solder mask or dielectric compositematerials. The dielectric layer, for example, may be formed bydispensing, printing, lamination or spin on techniques. Other dielectricmaterials and techniques may also be useful.

The first and second plated patterns as described above, for example,may be formed over the surfaces of the carrier in a single process step.Forming the first and second plated patterns on the surfaces of thecarrier in separate process steps may also be useful. The processes asdescribed with respect to FIGS. 6 a-6 e form the package substrate 301of the package.

Referring to FIG. 6 f, a semiconductor die 110 is provided and attachedto the die attach region 305 a defined on the top major surface of thepackage substrate 301 a. The semiconductor die includes a sensor orsensing element 115, similar to that described in FIG. 1 a. As such,details of the die will not be described or described in detail. In oneembodiment, the die is mounted to the die attach region using, forexample, an adhesive 120. Other suitable methods may also be used tomount the die to the carrier.

The process continues by electrically coupling the die pads 113 to thetop surface of the carrier using wire bonds as shown in FIG. 6 g. Thewire bonds, in one embodiment, include insulated wires 145 such as thatdescribed in FIGS. 1 a-1 e, 2, 3 a-3 b and 4. As such, details of theinsulated wires will not be described in detail. The insulated wirebonds may be formed and applied to the die and contact pads using anysuitable techniques. For example, the technique as described in FIG. 5 cmay be used. Other suitable techniques may also be useful.

The process continues by providing and attaching a cap 180 over thepackage substrate as shown in FIG. 6 h. The cap, for example, isattached to the package substrate using an adhesive, solder mask, etc.(not shown). Other suitable techniques may also be employed to mount thecap to the package substrate. The cap, for example, is similar to theone described in FIGS. 1 a-1 e. For example, the cap includes an opening184 which passes through the inner and outer surfaces 180 a ₁-180 a ₂ ofthe top portion 180 a of the cap as shown in FIG. 6 h. The opening, forexample, serves as an access port providing access path between thesensing element and the environment. The wire bonds, for example, arealso directly exposed to the ambient through the access port of the cap.The cap having the opening, for example, is formed by techniquesdescribed in FIG. 5 d above.

The process may continue to form package contacts 160 on the bottom ofthe package substrate, similar to that described in FIG. 5 e above. Assuch, a semiconductor package such as that shown in FIG. 3 a is formed.

FIGS. 7 a-7 f show another embodiment of a method for forming asemiconductor package 700. The process includes similar process steps asthat described in FIGS. 6 a-6 h. As such, common process steps may notbe described or described in detail. Referring to FIG. 7 a, a partiallyprocessed package substrate is provided. The partially processed packagesubstrate is at the same stage as that described in FIG. 6 c. Thematerials and features of the partially processed carrier are the sameas that described in FIG. 6 c. As such, common elements may not bedescribed or described in detail.

In one embodiment, the process continues by providing and attaching asemiconductor die 110 to the die attach region 305 a defined on the topmajor surface of the carrier 601 as shown in FIG. 7 b. The semiconductordie includes a sensor or sensing element 115, similar to that describedin FIG. 1 a. In one embodiment, the die is mounted to the die attachregion using, for example, an adhesive 120, similar to that described inFIG. 6 f, except that the second or bottom surface 601 b of the carrieris not yet processed at this stage. Other suitable methods may also beused to mount the die to the carrier.

Referring to FIG. 7 c, the process continues by electrically couplingthe die pads 113 to the top surface of the carrier using wire bonds. Thewire bonds, in one embodiment, include insulated wires 145 such as thatdescribed in FIGS. 1 a-1 e, 2, 3 a-3 b and 4. As such, details of theinsulated wires will not be described in detail. The insulated wirebonds may be formed and applied to the die and contact pads 132 usingany suitable techniques. For example, the technique as described in FIG.5 c may be used. Other suitable techniques may also be useful.

The process continues by providing and attaching a cap 180 over thepackage substrate as shown in FIG. 7 d. The cap and method of attachingthe cap, for example, are the same as that already described in FIG. 6h. As such, this process step will not be described. In one embodiment,the process continues to process the second or bottom surface 601 b ofthe carrier, while having the cap attached to the top surface of thecarrier 601 a as shown in FIG. 7 e. The second surface 601 b of thecarrier is patterned, removing portions of the bottom surface of thecarrier which are exposed using the technique as described in FIG. 6 d.The remaining bottom portions of the carrier form the via contacts 342of the via level as shown in FIG. 7 e.

Referring to FIG. 7 f, the process continues to form a second dielectricmaterial 350 b which fills the gaps between the via contacts. The seconddielectric material and the method of forming thereof are the same asthat described in FIG. 6 e. As such, these common features will not bedescribed or described in detail.

The process may continue to form package contacts 160 on the bottom ofthe package substrate, similar to that described in FIG. 5 e above. Assuch, a semiconductor package such as that shown in FIG. 3 a is formed.

The processes as described with respect to FIGS. 6 a-6 h and FIGS. 7 a-7f may be modified to further include a stiffener. For example, theprocess may further include providing a stiffener below the conductivetraces located at the non-die region of the package substrate.Alternatively, the stiffener may be provided in the non-die region aswell as partially extended to the die region 305 a of the packagesubstrate. The stiffener, for example, may be provided after patterningthe bottom surface of the carrier and prior to forming the dielectriclayer. The stiffener, for example, should be sufficiently rigid to serveas a support and withstand further processing steps. By way ofnon-limiting example, the stiffener includes a non-electricallyconductive tape. Various types of materials may be used for thestiffener. As a result, a semiconductor package such as that shown inFIG. 3 b is produced.

It is understood that the processes as described with respect to FIGS. 6a-6 h and FIGS. 7 a-7 f may optionally be further modified to includefeatures disclosed in FIGS. 1 b-1 e and FIG. 2. As such, thesemodifications will not be described or described in detail. Furthermore,for ease of understanding, certain method steps as described above aredelineated as separate steps; however, these separately delineated stepsshould not be construed as necessarily order dependent or being separatein their performance.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The foregoingembodiments, therefore, are to be considered in all respectsillustrative rather than limiting the invention described herein. Scopeof the invention is thus indicated by the appended claims, rather thanby the foregoing description, and all changes that come within themeaning and range of equivalency of the claims are intended to beembraced therein.

What is claimed is: 1-14. (canceled)
 15. A method for firming asemiconductor package comprising: providing a package substrate having adie region on a first surface thereof; providing a die having a sensingelement; attaching the die on the die region; electrically coupling thedie to contact pads disposed on the first surface of the packagesubstrate by insulated wire bonds; and providing a cap over the firstsurface of the package substrate, wherein the cap and the first surfaceof the package substrate define an inner cavity which accommodates thedie and the insulated wire bonds, and wherein the insulated wire bondsare directly exposed to an environment through at least one access portof the package.
 16. The method of claim 15 wherein: the cap comprises atop portion and sidewalls; and the access port extends through inner andouter surfaces of the top portion of the cap.
 17. The method of claim 15wherein: the package substrate comprises first and second majorsurfaces; and comprising processing the first surface of the substrate,wherein the processed first surface of the substrate comprises protrudedportions corresponding to conductive traces and a plurality of recesses;and providing first dielectric layer and filling the recesses with thefirst dielectric layer, wherein the first dielectric layer isolates theconductive traces.
 18. The method of claim 17 comprising: processing thesecond surface of the substrate to form via contacts and a plurality ofrecesses between the via contacts; and providing a second dielectriclayer and filling the recesses between the via contacts with the seconddielectric layer, wherein the second dielectric layer isolates the viacontacts.
 19. The method of claim 18 wherein: attaching the die isperformed after providing a second dielectric layer.
 20. The method ofclaim 18 wherein: attaching the die is performed prior to processing thesecond surface of the substrate.
 21. The method of claim 17 comprising:processing the second surface of the substrate to form via contacts anda plurality of recesses between the via contacts; providing a stifferbelow the conductive traces located at non-die region of the packagesubstrate; and providing a second dielectric layer and filling therecesses between the via contacts with the second dielectric layer,wherein the second dielectric layer isolates the via contacts.
 22. Themethod of claim 17 comprising: processing the second surface of thesubstrate to form via contacts and a plurality of recesses between thevia contacts; providing a stiffer below the conductive traces located atnon-die region and partially extends to the die region of the packagesubstrate; and providing a second dielectric layer and filling therecesses between the via contacts with the second dielectric layer,wherein the second dielectric layer isolates the via contacts.
 23. Themethod of claim 15 wherein the insulated wire bond comprises aconductive wire and an outer coating surrounding the conductive wire.24. The method of claim 15 wherein the package substrate comprises aprinted circuit board, metallic, ceramic, semiconductor or leadframebased substrate.
 25. The method of claim 15 wherein the wire bondcomprises first and second ends, wherein the first end is bonded to diepad of the die so as to form a ball bond while the second end is bondedto the contact pad so as to form a stitch bond.
 26. The method of claim25 comprising providing protective layers to cover the ball bond and thestitch bond.
 27. The method of claim 15 wherein the wire bond comprisesfirst and second ends, wherein the first end comprises a ball which iselectrically coupled to the contact pad and the second end is bonded toa stud bump which is over the die pad so as to form a stitch bond. 28.The method of claim 27 comprising providing protective layers to coverthe stud bump and the ball bond.
 29. The method of claim 15 comprisingproviding a surface mount device over the first surface of the packagesubstrate and wherein the wire bond comprises a loop profile having alateral curvature.
 30. The method of claim 15 wherein the cap comprisesa top portion and sidewalls, wherein the top portion and sidewalk of thecap are made of different materials.
 31. The method of claim 15 wherein:the cap comprises a top portion and sidewall; and the access portextends through inner and outer surfaces of the sidewall of the cap. 32.The method of claim 31 comprising providing a sealing ring surroundingthe sensing element and providing a lid over a top surface of thesealing ring.
 33. The method of claim 15 wherein the access port passesthrough the first and second surfaces of the package substrate.
 34. Themethod of claim 33 wherein: the die has a recess which extends from aninactive surface of the die; and the sensing element is disposed at thebottom of the recess.